IRF6641

A 200V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 26 amperes.

ParametricIRF6641
PackageDirectFET MZ
VDS  max200.0V
RDS (on) (@10V)  max59.9mΩ
RDS (on)  max59.9mΩ
PolarityN
ID (@ TA=70°C)  max3.7A
ID (@ TA=25°C)  max4.6A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG34.0nC
MountingSMD
RthJC  max1.4K/W
VGS  max20.0V
Moisture Sensitivity Level1
Qgd9.5nC
Tj  max150.0°C
Sales Product NameIRF6641
OPNIRF6641TRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Target Applications:
  • Battery Operated Drive
  • Class D Audio
  • Load Switch High Side
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6641,EN442 KB10 三月 2006
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6641PBFEN2 KB10 三月 2006
Saber Model - IRF6641PBFEN2 KB10 三月 2006
EN IRF6641
EN IDV20E65D1
EN IRF6641
EN IRF6641