IRF6797M

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 36 amperes optimized with low on resistance.

ParametricIRF6797M
PackageDirectFET MX
VDS  max25.0V
RDS (on) (@10V)  max1.4mΩ
RDS (on)  max1.4mΩ
RDS (on) (@4.5V)  max2.4mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max29.0A
ID (@ TA=25°C)  max36.0A
ID (@ TC=25°C)  max210.0A
Ptot (@ TA=25°C)  max2.8W
Ptot  max89.0W
QG45.0nC
MountingSMD
RthJC  max1.4K/W
Moisture Sensitivity Level1
Qgd13.0nC
Tj  max150.0°C
VGS  max20.0V
Sales Product NameIRF6797M
OPNIRF6797MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Target Applications:
  • MultiPhase SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6797M,EN243 KB27 五月 2008
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6797MPBFEN2 KB27 五月 2008
Saber Model - IRF6797MPBFEN2 KB27 五月 2008
EN IRF6797M
EN IDV20E65D1
EN IRF6797M
EN IRF6797M