IRF6811S

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance.

ParametricIRF6811S
PackageDirectFET SQ
VDS  max25.0V
RDS (on) (@10V)  max3.7mΩ
RDS (on)  max3.7mΩ
RDS (on) (@4.5V)  max5.4mΩ
PolarityN
ID (@ TA=70°C)  max15.0A
ID (@ TA=25°C)  max19.0A
ID (@ TC=25°C)  max74.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max32.0W
QG11.0nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max3.9K/W
Tj  max150.0°C
VGS  max16.0V
Qgd4.2nC
Sales Product NameIRF6811S
OPNIRF6811STRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • MultiPhase ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6811S,EN254 KB28 一月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6811SPBFEN2 KB28 一月 2011
Saber Model - IRF6811SPBFEN2 KB28 一月 2011
EN IRF6811S
EN IDV20E65D1
EN IRF6811S
EN IRF6811S