IRF6893M

25V Single N-Channel HEXFET Power MOSFET plus Schottky Diode in a DirectFET MX package rated at 29 amperes optimized with low on resistance.

ParametricIRF6893M
PackageDirectFET MX
VDS  max25.0V
RDS (on) (@10V)  max1.6mΩ
RDS (on)  max1.6mΩ
RDS (on) (@4.5V)  max2.1mΩ
PolarityN with Schottky
ID (@ TA=70°C)  max23.0A
ID (@ TA=25°C)  max29.0A
ID (@ TC=25°C)  max168.0A
Ptot (@ TA=25°C)  max1.3W
Ptot  max69.0W
QG25.0nC
MountingSMD
Moisture Sensitivity Level1
RthJC  max1.8K/W
Tj  max150.0°C
VGS  max16.0V
Qgd8.5nC
Sales Product NameIRF6893M
OPNIRF6893MTRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode
Target Applications:
  • MultiPhase SyncFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6893M,EN215 KB24 二月 2012
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6893MPBFEN2 KB24 二月 2012
Saber Model - IRF6893MPBFEN2 KB24 二月 2012
EN IRF6893M
EN IDV20E65D1
EN IRF6893M
EN IRF6893M