IRF7307

20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7307
PackageSO-8
VDS  max20.0V
RDS (on) (@4.5V)  max50.0mΩ
RDS (on) (@2.7V)  max70.0mΩ
RDS (on) (@4.5V)  max90.0mΩ
RDS (on) (@2.7V)  max140.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-3.6A
ID (@ TA=70°C)  max-2.9A
ID (@ TA=70°C)  max3.4A
ID (@ TA=25°C)  max4.3A
Ptot (@ TA=25°C)  max1.4W
QG13.3nC
QG14.7nC
Moisture Sensitivity Level1
Qgd (typ)5.3nC
Qgd (typ)6.0nC
Tj  max150.0°C
VGS  max12.0V
RthJA  max62.5K/W
Sales Product NameIRF7307
OPNIRF7307PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF7307TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7307,EN282 KB10 十一月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF7307NEN2 KB18 六月 2001
Saber Model - IRF7307PEN2 KB18 六月 2001
Saber Model - IRF7307NEN2 KB18 六月 2001
Spice Model - IRF7307PEN2 KB18 六月 2001
EN IRF7307
EN IDV20E65D1
EN IRF7307
EN IRF7307
EN IRF7307
EN IRF7307