IRF7507

20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package

ParametricIRF7507
PackageMicro8 (MO-187)
VDS  max20.0V
RDS (on) (@4.5V)  max140.0mΩ
RDS (on) (@2.7V)  max200.0mΩ
RDS (on) (@4.5V)  max270.0mΩ
RDS (on) (@2.7V)  max400.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-1.7A
ID (@ TA=70°C)  max-1.4A
ID (@ TA=70°C)  max1.9A
ID (@ TA=25°C)  max2.4A
Ptot (@ TA=25°C)  max1.25W
QG5.3nC
QG5.4nC
Moisture Sensitivity Level1
Qgd (typ)2.2nC
Qgd (typ)2.4nC
RthJA  max100.0K/W
Tj  max150.0°C
VGS  max12.0V
Sales Product NameIRF7507
OPNIRF7507PBF
Product Statusdiscontinued
Package NameMICRO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size80
Packing TypeTUBE
Moisture Level1
OPNIRF7507TRPBF
Product Statusactive
Package NameMICRO8
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Fast Switching
  • Low Profile (less than 1.1mm)
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7507,EN214 KB18 三月 2005
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF7507
EN IDV20E65D1