IRF8313

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF8313
PackageSO-8
RDS (on) (@10V)  max15.5mΩ
RDS (on)  max15.5mΩ
RDS (on) (@4.5V)  max21.6mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max8.1A
ID (@ TA=70°C)  max8.1A
ID (@ TA=25°C)  max9.7A
ID (@ TA=25°C)  max9.7A
QG6.0nC
RthJA  max62.5K/W
Ptot (@ TA=25°C)  max2.0W
VDS  max30.0V
Moisture Sensitivity Level1
Qgd (typ)2.2nC
Tj  max175.0°C
VGS  max20.0V
Sales Product NameIRF8313
OPNIRF8313TRPBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF8313PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8313,EN255 KB11 七月 2008
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF8313
EN IDV20E65D1