IRF8513

30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF8513
PackageSO-8
RDS (on) (@10V)  max12.7mΩ
RDS (on) (@10V)  max12.7mΩ
RDS (on)  max12.7mΩ
RDS (on)  max12.7mΩ
RDS (on) (@4.5V)  max16.9mΩ
RDS (on) (@4.5V)  max16.9mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max9.0A
ID (@ TA=70°C)  max9.0A
ID (@ TA=25°C)  max11.0A
ID (@ TA=25°C)  max11.0A
QG7.6nC
RthJA  max62.5K/W
Ptot (@ TA=25°C)  max2.4W
Qgd (typ)3.1nC
Moisture Sensitivity Level1
Ptot  max2.4W
Qgd (typ)3.1nC
Tj  max175.0°C
VDS  max30.0V
VGS  max20.0V
Sales Product NameIRF8513
OPNIRF8513TRPBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Low RDS(ON) at 4.5V VGS
  • Very Low Gate Charge
  • Dual N-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF8513,EN324 KB11 七月 2008
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF8513PBF-Q1EN2 KB11 七月 2008
Spice Model - IRF8513PBF-Q2EN2 KB11 七月 2008
Saber Model - IRF8513PBF-Q2EN2 KB11 七月 2008
Saber Model - IRF8513PBF-Q1EN2 KB11 七月 2008
EN IRF8513
EN IDV20E65D1
EN IRF8513
EN IRF8513
EN IRF8513
EN IRF8513