IRFB260N

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRFB260N
PackageTO-220
VDS  max200.0V
RDS (on)  max40.0mΩ
RDS (on) (@10V)  max40.0mΩ
PolarityN
ID  max40.0A
ID (@ TC=100°C)  max40.0A
ID (@ TC=25°C)  max56.0A
Ptot  max380.0W
QG150.0nC
MountingTHT
Qgd67.0nC
RthJC  max0.4K/W
Tj  max175.0°C
VGS  max20.0V
Sales Product NameIRFB260N
OPNIRFB260NPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Industry-leading quality
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • 175°C Operating Temperature
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB260N,EN170 KB23 七月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRFB260N
EN IDV20E65D1