IRFB33N15D

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRFB33N15D
PackageTO-220
VDS  max150.0V
RDS (on)  max56.0mΩ
RDS (on) (@10V)  max56.0mΩ
PolarityN
ID (@ TC=100°C)  max24.0A
ID  max24.0A
ID (@ TC=25°C)  max33.0A
Ptot  max3.8W
QG60.0nC
MountingTHT
Tj  max175.0°C
Qgd27.0nC
RthJC  max0.9K/W
VGS  max30.0V
Sales Product NameIRFB33N15D
OPNIRFB33N15DPBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB33N15D,EN280 KB08 二月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRFB33N15D
EN IDV20E65D1