IRFB812

500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

ParametricIRFB812
PackageTO-220
VDS  max500.0V
RDS (on) (@10V)  max2200.0mΩ
RDS (on)  max2200.0mΩ
PolarityN
ID (@ TC=100°C)  max2.3A
ID  max2.3A
ID (@ TC=25°C)  max3.6A
Ptot  max78.0W
QG13.3nC
MountingTHT
Tj  max150.0°C
Qgd4.8nC
RthJC  max1.6K/W
VGS  max20.0V
Sales Product NameIRFB812
OPNIRFB812PBF
Product Statusactive
Package NameTO220
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture LevelTHP
Benefits:
  • RoHS Compliant
Target Applications:
  • Battery Operated Drive
  • Consumer Full-Bridge
  • Full-Bridge
  • Push-Pull
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB812,EN254 KB24 六月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRFB812
EN IDV20E65D1