IRFHM831

30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package

ParametricIRFHM831
PackagePQFN 3.3 x 3.3 B/G
RDS (on)  max7.8mΩ
RDS (on) (@10V)  max7.8mΩ
RDS (on) (@4.5V)  max12.6mΩ
PolarityN
ID (@ TA=70°C)  max11.0A
ID (@ TA=25°C)  max14.0A
ID (@ TC=25°C)  max47.0A
QG7.3nC
RthJC  max4.7K/W
MountingSMD
Moisture Sensitivity Level1
Ptot (@ TA=25°C)  max2.5W
Qgd2.5nC
Tj  max150.0°C
VGS  max20.0V
Ptot  max27.0W
VDS  max30.0V
Sales Product NameIRFHM831
OPNIRFHM831TRPBF
Product Statusdiscontinued
Package NamePQFN 3.3X3.3 8L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low Thermal Resistance to PCB (less than 4.7°C/W)
  • Low Profile (less than 1.0 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified Industrial
  • Qualified MSL1
Target Applications:
  • Battery Protection
  • Isolated Primary Side MOSFETs
  • Isolated Secondary Side SyncRec MOSFETs
  • Load Switch High Side
  • Load Switch Low Side
  • Point of Load ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFHM831,EN475 KB21 七月 2010
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFHM831EN2 KB21 七月 2010
Saber Model - IRFHM831EN2 KB21 七月 2010
EN IRFHM831
EN IDV20E65D1
EN IRFHM831
EN IRFHM831