IRFHM8363

30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package

ParametricIRFHM8363
PackagePQFN 3.3 x 3.3 E
RDS (on)  max14.9mΩ
RDS (on) (@10V)  max14.9mΩ
RDS (on) (@4.5V)  max20.4mΩ
PolarityN+N
PolarityN+N
ID (@ TA=25°C)  max11.0A
ID (@ TA=25°C)  max11.0A
QG15.0nC
RthJA  max47.0K/W
Moisture Sensitivity Level1
Ptot (@ TA=25°C)  max2.7W
Qgd (typ)2.0nC
Tj  max150.0°C
VGS  max20.0V
VDS  max30.0V
Sales Product NameIRFHM8363
OPNIRFHM8363TRPBF
Product Statusnot for new design
Package NamePQFN 3.3X3.3 8L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Low Profile (less than 1.1 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified MSL1
  • Dual N-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFHM8363,EN320 KB30 五月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRFHM8363PBFEN2 KB30 五月 2011
Spice Model - IRFHM8363PBFEN2 KB30 五月 2011
EN IRFHM8363
EN IDV20E65D1
EN IRFHM8363
EN IRFHM8363