IRFSL38N20D

200V Single N-Channel HEXFET Power MOSFET in a TO-262 package

ParametricIRFSL38N20D
PackageI2PAK (TO-262)
VDS  max200.0V
RDS (on) (@10V)  max54.0mΩ
RDS (on)  max54.0mΩ
PolarityN
ID (@ TC=100°C)  max32.0A
ID  max32.0A
ID (@ TC=25°C)  max44.0A
Ptot  max320.0W
QG60.0nC
MountingTHT
RthJC  max0.47K/W
VGS  max30.0V
Qgd28.0nC
Tj  max175.0°C
Sales Product NameIRFSL38N20D
OPNIRFSL38N20DPBF
Product Statusactive
Package NameTO262
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-leading quality
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
Data Sheet
TitleSizeDateVersion
Data Sheet - IRFB38N20D,EN336 KB27 五月 2005
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRFB_S_SL38N20DEN2 KB14 十二月 2001
Saber Model - IRFB_S_SL38N20DEN2 KB14 十二月 2001
EN IRFB38N20D
EN IDV20E65D1
EN IRFB38N20D
EN IRFB38N20D