IRLHS6376

30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package

ParametricIRLHS6376
PackagePQFN 2 x 2
RDS (on) (@2.5V)  max82.0mΩ
PolarityN+N
PolarityN+N
ID (@ TA=70°C)  max2.9A
ID (@ TA=70°C)  max2.9A
ID (@ TA=25°C)  max3.6A
ID (@ TA=25°C)  max3.6A
QG2.8nC
RthJA  max86.0K/W
Moisture Sensitivity Level1
Ptot (@ TA=25°C)  max1.5W
Qgd (typ)1.1nC
Tj  max150.0°C
VDS  max30.0V
VGS  max12.0V
Sales Product NameIRLHS6376
OPNIRLHS6376TRPBF
Product Statusactive and preferred
Package NamePQFN 2X2 6L
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Low Profile (less than 1.0 mm)
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Dual N-Channel MOSFET
Target Applications:
  • DC Switches
  • Load Switch
Data Sheet
TitleSizeDateVersion
Data Sheet - IRLHS6376,EN290 KB12 十月 2010
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRLHS6376PBFEN2 KB12 十月 2010
Saber Model - IRLHS6376PBFEN2 KB12 十月 2010
EN IRLHS6376
EN IDV20E65D1
EN IRLHS6376
EN IRLHS6376