PTFB091802FC V1

High Power RF LDMOS FET, 180W, 28V, 920 - 960MHz

ParametricPTFB091802FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB180.0W
Supply Voltage28.0V
Pout55.0W
Gain19.5dB
Test SignalWCDMA
Sales Product NamePTFB091802FC V1
OPNPTFB091802FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFB091802FCV1XWSA1
Product Statusdiscontinued
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal input and output matching
  • Dual path design (2 X 90 W)
  • Typical CW performance at 960 MHz, 28 V - Ouput power @ P1dB = 206 W - Efficiency = 56% - Gain = 18 dB
  • Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS-compliant
Data Sheet
TitleSizeDateVersion
PTFB091802FC,EN645 KB27 三月 201502_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
Infineon-PTFB091802FC-RD-v01_00-ENEN225 KB17 四月 201501_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PTFB091802FCV1XWSA1EN344 KB11 四月 201601_00
EN PTFB091802FC+V1
EN where-to-buy
EN PTFB091802FC+V1
EN PTFB091802FC+V1