PTFB093608SV V2 R250

High Power RF LDMOS FET, 360 W, 28 V, 920 – 960 MHz

ParametricPTFB093608SV V2 R250
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB360.0W
Supply Voltage28.0V
Pout160.0W
Gain20.0dB
Test SignalWCDMA
Sales Product NamePTFB093608SV V2 R250
OPNPTFB093608SVV2R250XTMA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems and Doherty applications
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance, 960 MHz, 28 V, device leads in gullwing configuration - Average output power = 160 W - Gain = 19 dB - Efficiency = 40%
  • Integrated ESD protection
  • Low thermal resistance
  • Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB Input Overdrive = 500 W (CW) output power
  • Pb-Free and RoHS compliant
  • Package: H-37275G-6/2, gull wing, surface mount
Data Sheet
TitleSizeDateVersion
PTFB093608SV V2 DS,EN998 KB22 一月 201505_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Development Tools
TitleSizeDateVersion
PTFB093608FSV RD308 KB01 四月 201101_01
EN PTFB093608SV+V2+R250
EN where-to-buy
PTFB093608FSV RD PTFB093608SV+V2+R250