PTFB211503EL V1

High Power RF LDMOS FET, 150 W, 30 V, 2110 – 2170 MHz

ParametricPTFB211503EL V1
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB150.0W
Supply Voltage30.0V
Pout32.0W
Gain18.0dB
Test SignalWCDMA
Sales Product NamePTFB211503EL V1
OPNPTFB211503ELV1XWSA1
Product Statusdiscontinued
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
OPNPTFB211503ELV1R0XTMA1
Product Statusactive and preferred
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Typical two-carrier WCDMA performance at 2170 MHz, 30 V, - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 29% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 150 W - Efficiency = 55%
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Integrated ESD protection
  • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power
  • Pb-Free and RoHS compliant
  • Package: H-33288-6, bolt-down
Data Sheet
TitleSizeDateVersion
PTFB 211503EFL V1 V2 DS,EN589 KB02 六月 201004_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFB211503EFL RD103 KB17 八月 201002_01
Package Data
TitleSizeDateVersion
H-33288-6-1 | PTFB211503ELV1XWSA1EN345 KB11 四月 201601_00
EN PTFB211503FL+V2
EN where-to-buy
PTFB211503EFL RD PTFB211503FL+V2
EN PTFB211503EL+V1