PTFB211803FL V2

High Power RF LDMOS FET, 180 W, 30 V, 2110 – 2170 MHz

ParametricPTFB211803FL V2
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB180.0W
Supply Voltage30.0V
Pout50.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePTFB211803FL V2
OPNPTFB211803FLV2XWSA1
Product Statusdiscontinued
Package NameH-34288-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
OPNPTFB211803FLV2R0XTMA1
Product Statusactive and preferred
Package NameH-34288-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 40 W - Linear Gain = 17.5 dB - Efficiency = 29.7% - Intermodulation distortion = –34 dBc - Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 30 V - Output power at P1dB = 180 W - Efficiency = 55%
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Integrated ESD protection.
  • Capable of handling 10:1 VSWR @ 30 V, 180 W (CW) output power
  • Pb-free and RoHS compliant
  • Package: H-34288-4/2, earless
Data Sheet
TitleSizeDateVersion
PTFB 211803EFL,EN577 KB13 七月 201005_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-34288-4/2-1 | PTFB211803FLV2XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB211803EFL RD103 KB25 八月 201001_02
EN PTFB211803FL+V2
EN where-to-buy
EN PTFB211803FL+V2
PTFB211803EFL RD PTFB211803FL+V2