PTFC260362SC V1 R250

High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz

ParametricPTFC260362SC V1 R250
Flange TypeSurface Mount
MatchingInput
Frequency Band  min  max2496.0MHz  2690.0MHz
P1dB33.0W
Supply Voltage28.0V
Pout8.0W
Gain18.5dB
Test SignalWCDMA
Sales Product NamePTFC260362SC V1 R250
OPNPTFC260362SCV1R250XTMA1
Product Statusactive and preferred
Package NameH-37248H-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Input matching
  • Typical pulsed CW performance, 2690 MHz, 28 V (10 µs pulse width, 10% duty cycle, class AB test) - Output power @ P1dB = 33 W - Efficiency = 52% - Gain = 17.8 dB
  • Typical single-carrier WCDMA performance, 2690 MHz, 28 V, 10 dB PAR - Output power = 8 W avg - Gain = 18.6 dB - Efficiency = 30% - ACPR = -35 dBc
  • Capable of handling 10:1 VSWR @30 V, 32 W (CW) output power
  • Integrated ESD protection: HBM, Class 1B (per JESD22-A114)
Data Sheet
TitleSizeDateVersion
PTFC 260362SC V1195 KB26 六月 201403_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-37248H-4-1 | PTFC260362SCV1R250XTMA1EN343 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
Reference Design files for PTFC 260362SC200 KB17 十月 201301_00
PTFC 260362SC V1 PTFC260362SC+V1+R250
EN where-to-buy
EN PTFC260362SC+V1+R250
Reference Design files for PTFC 260362SC PTFC260362SC+V1+R250