PTVA093002TC V1 R250

High Power RF LDMOS FET, 300 W, 50 V, 703 – 960 MHz

ParametricPTVA093002TC V1 R250
Flange TypeEarless
MatchingInput
Frequency Band  min  max703.0MHz  960.0MHz
P1dB300.0W
Supply Voltage50.0V
Pout63.0W
Gain18.5dB
Test SignalPulsed
Summary of Features:
  • Typical pulsed CW performance in a combined-lead 50-ohm single-ended fi xture, 870 MHz, 50 V - Output power at P3dB = 280 W - Gain = 16.2 dB - Efficiency = 50%
  • Integrated ESD protection, Human Body Model class 2 (per JESD22-A114)
  • Capable of withstanding a 10:1 load mismatch at 50 V, 63 W (CW) output power
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PTVA 093002TC DS,EN203 KB16 六月 201404_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-49248H-4-1 | PTVA093002TCV1R250XTMA1EN343 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTVA093002TC Reference Design360 KB12 二月 201403_00
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EN PTVA093002TC+V1+R250
PTVA093002TC Reference Design PTVA093002TC+V1+R250