PXAC213308FV V1

High Power RF LDMOS FET, 320 W, 28 V, 2110 – 2200 MHz

ParametricPXAC213308FV V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2200.0MHz
P1dB320.0W
Supply Voltage28.0V
Pout55.0W
Gain16.5dB
Test SignalWCDMA
Sales Product NamePXAC213308FV V1
OPNPXAC213308FVV1R0XTMA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPXAC213308FVV1R2XTMA1
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size250
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband internal input and output matching
  • Asymmetrical Doherty design - Main : P1dB = 140 W Typ - Peak : P1dB = 190 W Typ
  • Typical Pulsed CW performance, 2170 MHz, 28 V, combined outputs - Output power at P 3dB = 320 W - Efficiency = 53% @ P 3dB - Gain = 16 dB@ P 3dB
  • Capable of handling 10:1 VSWR @ 28 V, 170 W CW output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
Data Sheet
TitleSizeDateVersion
PXAC213308FV DS,EN658 KB04 五月 201602_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PXAC213308FV RDEN117 KB26 五月 201602_00
EN PXAC213308FV+V1
EN where-to-buy
EN PXAC213308FV+V1