SIDC23D120H8

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricSIDC23D120H8
TechnologyEmitter Controlled Diode Fast
VDS  max1200.0V
IF  max35.0A
I(FSM)  max70.0A
VF1.6V
IR  max27.0µA
Sales Product NameSIDC23D120H8
OPNSIDC23D120H8X1SA4
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
OPNSIDC23D120H8X1SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • Industrial drives
  • Resonant application
Data Sheet
TitleSizeDateVersion
SIDC23D120H8,EN196 KB03 六月 201602_01
EN SIDC23D120H8