A2T18S260W12N: 1805-1880 MHz,56 W平均值,28 V Airfast LDMOS射频功率晶体管

特性
  • 专为宽瞬时带宽应用而设计
  • 增大负栅源电压范围,改善C类放大器运行
  • 可承受极高的输出VSWR和宽带运行条件
  • 为Doherty应用进行了优化
  • 符合RoHS规范
OM-880X-2L2L Package Image
数据手册 (1)
名称/描述Modified Date
A2T18S260W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet (REV 0) PDF (323.9 kB) A2T18S260W12N [English]12 Feb 2016
应用说明 (2)
名称/描述Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]13 May 2009
工程设计要点 (1)
名称/描述Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]19 Jan 2004
选型工具指南 (1)
名称/描述Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]26 May 2016
封装信息 (1)
名称/描述Modified Date
98ASA00549D, OMNI, 23.11x9.96x3.81, Pitch 13.41, 5 Pins (REV A) PDF (81.6 kB) 98ASA00549D [English]15 Feb 2016
印刷电路板
订购信息
型号状态Frequency Min (Min) (MHz)Frequency Max (Max) (MHz)供电电压 (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)输出功率 (Typ) (W) @ Intermodulation Level at Test Signal测试信号功率增益 (Typ) (dB) @ f (MHz)效率 (Typ) (%)热阻 (Spec)(°C/W)匹配类型模具技术
A2T18S260W12NR3Active180518802854.528056 @ AVGW-CDMA18.7 @ 188034.40.23I/OABLDMOS
封装环保信息
封装说明Outline Version包装产品状态部件编号化学成分RoHS / Pb Free中国RoHS查询MSLPPT (°C)
OM-880X-2L2L98ASA00549DMPQ - 250 REELPOQ - 250 BOXActiveA2T18S260W12NR3A2T18S260W12NR3.pdf3260
A2T18S260W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet A2T18S260W12N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
A2T18S260W12N 1800 MHz PCB DXF file A2T18S260W12N
98ASA00549D, OMNI, 23.11x9.96x3.81, Pitch 13.41, 5 Pins A2T18S260W12N
A2T18S260W12NR3.pdf A2T18S260W12N