BGS8M4UK: SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

The BGS8M4UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip-Scale Package (WLCSP). The BGS8M4UK requires one external matching inductor.

The BGS8M4UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8M4UK can be switched off to operate in bypass mode at a 1 μA current, to lower power consumption. The BGS8M4UK requires only one external matching inductor.

The BGS8M4UK is optimized for 1805 MHz to 2200 MHz.

数据手册 (1)
名称/描述Modified Date
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE (REV 1.0) PDF (173.0 kB) BGS8M4UK [English]10 Feb 2016
应用说明 (1)
名称/描述Modified Date
BGS8M4UK LTE LNA with bypass switch evaluation board (REV 1.0) PDF (1.0 MB) AN11749 [English]24 Nov 2015
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)Pi(1dB) [typ] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)@f (MHz)
BGS8M4UK/SIntroduction Pending1.53.116.60.8
BGS8M4UKActiveSOT1445-11.53.116.60.8
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGS8M4UK/SDevelopmentBGS8M4UK/SZ (9340 709 97019)Standard Marking
BGS8M4UKActiveBGS8M4UKZ (9340 699 26019)Standard MarkingBGS8M4UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE BGS8M4UK
BGS8M4UK LTE LNA with bypass switch evaluation board BGS8M4UK