MWE6IC9080N: 865-960 MHz，80 W连续波，28 V GSM，GSM EDGE LDMOS宽带射频集成功率放大器

典型GSM性能：VDD = 28 V，IDQ1 = 230 mA，IDQ2 = 630 mA，连续波输出功率 = 80 W 频率 Gps(dB) 功率附加效率(%) 920 MHz29.049.7 940 MHz28.851.6 960 MHz28.552.3
在32 Vdc，940 MHz，128 W连续波输出功率(自额定输出功率3 dB输入过驱)时，能承受10:1 VSWR，旨在增强耐用性
在5:1 VSWR下保持稳定。在1 mW至80 W连续波输出功率时，所有杂散低于–60 dBc
1 dB压缩点时，典型连续波输出功率 ≃ 90 W
典型GSM EDGE性能：VDD = 28 V，IDQ1 = 230 mA，IDQ2 = 630 mA，平均输出功率 = 35 W。频率 Gps(dB) 功率附加效率(%) SR1@ 400 kHz(dBc) SR2@ 600 kHz(dBc) EVM(% rms) 920 MHz30.037.0–62–750.8 940 MHz30.037.8–62–751.2 960 MHz29.538.0–62–751.5
提供串联等效大信号阻抗参数和共源S参数
片上匹配(50 Ohm隔直输入)
集成静态电流温度补偿，具有启用/禁用功能
集成的ESD保护
可耐225°C高温的塑料封装
符合RoHS规范
采用盘卷包装。R1后缀 = 500个，44 mm卷带宽度，13英寸卷盘。

名称/描述	Modified Date
MWE6IC9080NR1, MWE6IC9080GNR1, MWE6IC9080NBR1 865-960 MHz, 80 W CW, 28 V GSM, GSM EDGE RF LDMOS Wideband Integrated... (REV 0) PDF (743.5 kB) MWE6IC9080N [English]	28 Apr 2010

名称/描述	Modified Date
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 [English]	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 [English]	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 [English]	07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 [English]	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 [English]	09 Oct 2003

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

名称/描述	Modified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP [English]	15 May 2015

名称/描述	Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D [English]	18 Mar 2016
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins (REV B) PDF (71.4 kB) 98ASA10649D [English]	26 Feb 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D [English]	26 Feb 2016

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MWE6IC9080NBR1	Active	865	960	28	49.5	90	80 @ CW	CW	28.5 @ 960	52.3	0.52	I/O	AB	LDMOS
MWE6IC9080NR1	No Longer Manufactured	865	960	28	49.5	90	80 @ CW	CW	28.5 @ 960	52.3	0.52	I/O	AB	LDMOS
MWE6IC9080GNR1	No Longer Manufactured	865	960	28	49.5	90	80 @ CW	CW	28.5 @ 960	52.3	0.52	I/O	AB	LDMOS

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	MSL	PPT (°C)
TO-272 WB-14 LEAD	98ASA10649D	MPQ - 500 REELPOQ - 500 REEL	Active	MWE6IC9080NBR1	MWE6IC9080NBR1.pdf	3	260
TO-270 WB-14 GULL	98ASA10653D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MWE6IC9080GNR1	MWE6IC9080GNR1.pdf	3	260
TO-270 WB-14 LEAD	98ASA10650D	MPQ - 500 REELPOQ - 500 REEL	No Longer Manufactured	MWE6IC9080NR1	MWE6IC9080NR1.pdf	3	260