PBSS4160PANPS: 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.

sot1118d_3d
数据手册 (1)
名称/描述Modified Date
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor (REV 1.0) PDF (331.0 kB) PBSS4160PANPS [English]11 Feb 2015
封装信息 (1)
名称/描述Modified Date
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English]08 Feb 2016
订购信息
型号状态Package versionPackage name大小 (mm)Transistor polaritytransistor polarityPolaritynumber of transistorsPtot [max] (mW)ICM [max] (A)VCEO [max] (V)IC [max] (A)VCEsat [max] (NPN) (mV)hFE [typ]VCEsat [max] (PNP) (mV)fT [min] (MHz)RCEsat@IC [max]; IC/IB =10 [typ] (mΩ)RCEsat [typ] (mΩ)hFE [min]VCEsat [max] (mV)fT [typ] (MHz)RCEsat [max] (mΩ)
PBSS4160PANPSActiveSOT1118DDFN2020D-62 x 2 x 0.65NPN/PNPNPN/PNP23701.5601220430-34090359.99999999999999290240175360
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期EFRIFR(FIT)MTBF(小时)MSLMSL LF
PBSS4160PANPSSOT1118DReel 7" Q1/T1ActivePBSS4160PANPSX (9340 690 01115)3GAlways Pb-free153.00.711.41E911
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor PBSS4160PANPS
DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... PBSS5260PAPS
DOUBLE_LOW_VCESAT_BISS_TRANSISTORS_IN_DFN2020_6