PHPT61010PY: 100 V, 10 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

NPN complement: PHPT61010NY.

SOT669
数据手册 (1)
名称/描述Modified Date
100 V, 10 A PNP high power bipolar transistor (REV 1.0) PDF (234.0 kB) PHPT61010PY [English]20 Mar 2015
应用说明 (1)
名称/描述Modified Date
Relay replacement by NXP® high-power bipolar transistors in LFPAK56 (REV 1.0) PDF (1.3 MB) AN11641 [English]21 May 2015
手册 (1)
名称/描述Modified Date
Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 (REV 1.0) PDF (1.4 MB) 75017639 [English]20 Feb 2015
封装信息 (1)
名称/描述Modified Date
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads (REV 1.0) PDF (213.0 kB) SOT669 [English]08 Feb 2016
包装 (1)
名称/描述Modified Date
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... (REV 3.0) PDF (101.0 kB) SOT669_115 [English]09 Sep 2016
SPICE
订购信息
型号状态Package versionPackage name大小 (mm)Transistor polaritytransistor polaritynumber of transistorsPtot [max] (mW)VCEO [max] (V)IC [max] (A)ICM [max] (A)hFE [min]fT [min] (MHz)hFE [typ]fT [typ] (MHz)RCEsat [typ] (mΩ)RCEsat [max] (mΩ)VCEsat [max] (mV)
PHPT61010PYActiveSOT669LFPAK56; Power-SO83.95 x 4.9 x 1.1PNP125000-100-10-20180330905380-800
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHFEFRIFR(FIT)MTBF(小时)MSLMSL LF
PHPT61010PYSOT669Reel 7" Q1/T1ActivePHPT61010PYX (9340 685 86115)1010PABPHPT61010PY153.00.711.41E911
100 V, 10 A PNP high power bipolar transistor PHPT61010PY
Relay replacement by NXP® high-power bipolar transistors in LFPAK56 PHPT61003PY
Full power in half the footprint - First bipolar transistors in LFPAK / Power-SO8 PHPT61003PY
PHPT61010PY SPICE Model PHPT61010PY
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads PHPT61003PY
LFPAK56; Reel pack; SMD, 7" Q1/T1 standard product orientation Orderable part number ending ,115 or... PHPT61003PY
PSMN9R5-30YLC