BGS8L4UK: SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
The BGS8L4UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip-Scale Package (WLCSP). The BGS8L4UK requires one external matching inductor.
The BGS8L4UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8L4UK can be switched off to operate in bypass mode at a 1 μA current, to lower power consumption. The BGS8L4UK requires only one external matching inductor.
The BGS8L4UK is optimized for 720 MHz to 960 MHz.
Moisture sensitivity level of 1 LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules | sot1445-1_3d |
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封装信息 (1)
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订购信息
| 型号 | 状态 | Package version | @VCC [min] (V) | @VCC [max] (V) | @ICC [typ] (mA) | Gp [typ] (dB) | NF [typ] (dB) | Pi(1dB) [min] (dBm) | Pi(1dB) [typ] (dBm) | IP3i [min] (dBm) | IP3i [typ] (dBm) | @VCC (V) | @f (MHz) |
|---|
| BGS8L4UK/S | Introduction Pending | SOT1445-1 | 1.5 | 3.1 | | 17.3 | 0.8 | | | | | | |
| BGS8L4UK | Active | SOT1445-1 | 1.5 | 3.1 | | 17.3 | 0.8 | | | | | | |
封装环保信息
