BGU8H1: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8H1 is a Low Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8H1 requires one external matching inductor.

The BGU8H1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 13 dB gain at a noise figure of 0.9 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8H1 is optimized for 2300 MHz to 2690 MHz.

sot1232_3d
数据手册 (1)
名称/描述Modified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 2.0) PDF (127.0 kB) BGU8H1 [English]28 Apr 2016
应用说明 (1)
名称/描述Modified Date
BGU8H1 LTE LNA evaluation board (REV 3.0) PDF (1.1 MB) AN11514 [English]27 Jan 2016
封装信息 (1)
名称/描述Modified Date
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (REV 1.0) PDF (185.0 kB) SOT1232 [English]08 Feb 2016
支持信息 (1)
名称/描述Modified Date
Solderlayout SOT1232 (REV 1.0) PDF (32.0 kB) SOLDERLAYOU_SOT1232 [English]16 May 2014
S-参数
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8H1ActiveSOT12321.53.1130.9-32350
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGU8H1SOT1232Solderlayou_SOT1232Reel 7" Q1/T1ActiveBGU8H1X (9340 685 34115)FBGU8H1Always Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8H1
BGU8H1 LTE LNA evaluation board BGU8H1
S-parameters BGU8H1 BGU8H1
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm BGU8M1
Solderlayout SOT1232 BGU8M1
BGU8M1