BGU8L1: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8L1 is a Low Noise Amplifier (LNA) for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8L1 requires one external matching inductor.

The BGU8L1 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 14 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8L1 is optimized for 728 MHz to 960 MHz.

sot1232_3d
数据手册 (1)
名称/描述Modified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 2.0) PDF (127.0 kB) BGU8L1 [English]04 Apr 2016
应用说明 (1)
名称/描述Modified Date
BGU8L1 LTE LNA evaluation board (REV 2.0) PDF (850.0 kB) AN11512 [English]15 Jan 2016
封装信息 (1)
名称/描述Modified Date
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm (REV 1.0) PDF (185.0 kB) SOT1232 [English]08 Feb 2016
支持信息 (1)
名称/描述Modified Date
Solderlayout SOT1232 (REV 1.0) PDF (32.0 kB) SOLDERLAYOU_SOT1232 [English]16 May 2014
S-参数
订购信息
型号状态Package version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8L1ActiveSOT12321.53.114.50.7-3882
封装环保信息
产品编号封装说明Outline Version回流/波峰焊接包装产品状态部件编号订购码 (12NC)Marking化学成分RoHS / 无铅 / RHF无铅转换日期MSLMSL LF
BGU8L1SOT1232Solderlayou_SOT1232Reel 7" Q1/T1ActiveBGU8L1X (9340 685 32115)DBGU8L1Always Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8L1
BGU8L1 LTE LNA evaluation board BGU8L1
S-parameters BGU8L1 BGU8L1
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1.1 x 0.7 x 0.37 mm BGU8M1
Solderlayout SOT1232 BGU8M1
BGU8M1