MRF6VP121KH: 965-1215 MHz，1000 W，50 V宽带射频功率LDMOS _ BDTIC 中国领先电子元器件代理商

MRF6VP121KH: 965-1215 MHz，1000 W，50 V宽带射频功率LDMOS

特性

典型脉冲性能：VDD = 50 V，IDQ = 150 mA，输出功率 = 1000 W峰值(100 W平均值)，f = 1030 MHz，脉冲宽度 = 128 µsec，占空比 = 10% 功率增益：20 dB漏极效率：56%
在50 Vdc，1030 MHz，1000 W峰值功率时，能承受5:1 VSWR
提供串联等效大信号阻抗参数
内部匹配，简便易用
工作电压最高可达50 VDD
集成的ESD保护
专为推挽操作而设计
增大负栅源电压范围，改善C类放大器运行
符合RoHS规范
采用盘卷包装。R6后缀 = 150个，56 mm卷带宽度，13英寸卷盘。
这些产品包含在恩智浦产品长期供货计划中，自推出后至少保证10年供货。

NI-1230H-4S, NI-1230S-4S Product Images

数据手册 (1)

名称/描述	Modified Date
MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs (REV 3) PDF (1.2 MB) MRF6VP121KH [English]	28 Apr 2010

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

手册 (1)

名称/描述	Modified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 [English]	04 Sep 2015

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

白皮书 (1)

名称/描述	Modified Date
50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP [English]	08 Sep 2011

封装信息 (2)

名称/描述	Modified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C [English]	05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C [English]	23 Feb 2016

订购信息

型号	状态	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
MRF6VP121KHR5	Active		965	1215	50	60	1000	1000 @ Peak	Pulse	20 @ 1030	56	0.02	Unmatched	AB	LDMOS
MRF6VP121KHSR5	Active		965	1215	50	60	1000	1000 @ Peak	Pulse	20 @ 1030	56	0.02	Unmatched	AB	LDMOS
MRF6VP121KHR6	No Longer Manufactured		965	1215	50	60	1000	1000 @ Peak	Pulse	20 @ 1030	56	0.02	Unmatched	AB	LDMOS
MRF6VP121KHSR6	No Longer Manufactured		965	1215	50	60	1000	1000 @ Peak	Pulse	20 @ 1030	56	0.02	Unmatched	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-1230	98ASB16977C	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6VP121KHR5	MRF6VP121KHR5.pdf		260
NI-1230	98ASB16977C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6VP121KHR6	MRF6VP121KHR6.pdf		260
NI-1230S	98ARB18247C	MPQ - 50 REELPOQ - 50 REEL	Active	MRF6VP121KHSR5	MRF6VP121KHSR5.pdf		260
NI-1230S	98ARB18247C		Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part	MRF6VP121KHSR6	MRF6VP121KHSR6.pdf		260

MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs mrf6vp121kh

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Solutions for Commercial Aerospace mrfe6vs25n

RF Products Selector Guide MMT20303H

50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h

98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF6VP121KHR5.pdf MRF6VP121KH

MRF6VP121KHR6.pdf MRF6VP121KH

98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H

MRF6VP121KHSR5.pdf MRF6VP121KH

MRF6VP121KHSR6.pdf MRF6VP121KH

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