MJ21195: Bipolar Transistor, PNP, 250 V, 16 A

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.

特性
  • Total Harmonic Distortion Characterized
  • High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
  • Excellent Gain Linearity
  • High SOA: 3 A, 80 V, 1 Second
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice modelMJ21195.LIB (0.0kB)0
Saber modelMJ21195.SIN (1.0kB)0
Spice 2 modelMJ21195.SP2 (0.0kB)0
Spice 3 modelMJ21195.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Silicon Power TransistorsMJ21195/D (125.0kB)6
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
MJ21195GActivePb-freeTO-204-21-07NATray Foam100$2.0159
订购产品技术参数
ProductPolarityIC Continuous (A)VCEO(sus) Min (V)hFE MinhFE MaxPTM Max (W)fT Min (MHz)
MJ21195GPNP1625025752505
Silicon Power Transistors (125.0kB) MJ21196
PSpice model MJ21195
Saber model MJ21195
Spice 2 model MJ21195
Spice 3 model MJ21195
TO-204 (TO-3) 2N6341