MJ21196: Bipolar Transistor, NPN, 250 V, 16 A _ BDTIC 中国领先电子元器件代理商

MJ21196: Bipolar Transistor, NPN, 250 V, 16 A

The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.

特性

Total Harmonic Distortion Characterized
High DC Current Gain - hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 3 A, 80 V, 1 Second
Pb-Free Packages are Available

仿真模型 (4)

Document Title	Document ID/Size	Revision	Revision Date
PSpice model	MJ21196.LIB (0.0kB)	0
Saber model	MJ21196.SIN (1.0kB)	0
Spice 2 model	MJ21196.SP2 (0.0kB)	0
Spice 3 model	MJ21196.SP3 (0.0kB)	0

封装图纸 (1)

Document Title	Document ID/Size	Revision
TO-204 (TO-3)	1-07 (32kB)	Z

数据表 (1)

Document Title	Document ID/Size	Revision	Revision Date
Silicon Power Transistors	MJ21195/D (125.0kB)	6

产品订购型号

产品	状况	Compliance	封装		MSL*	容器		预算价格 (1千个数量的单价）
MJ21196G	Active	Pb-free	TO-204-2	1-07	NA	Tray Foam	100	$2.0159

订购产品技术参数

Product	Polarity	IC Continuous (A)	VCEO(sus) Min (V)	hFE Min	hFE Max	PTM Max (W)	fT Min (MHz)
MJ21196G	NPN	16	250	25	75	250	5

Silicon Power Transistors (125.0kB) MJ21196

PSpice model MJ21196

Saber model MJ21196

Spice 2 model MJ21196

Spice 3 model MJ21196

TO-204 (TO-3) 2N6341

©1993 - 2024 BDTIC