MJW21196: Bipolar Transistor, NPN, 250 V, 16 A
The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
特性- Total Harmonic Distortion Characterized
- High DC Current Gain –hFE = 20 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 2.25 A, 80 V, 1 Second
- Pb-Free Packages are Available
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封装
仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340L-02 (57.4kB) | F |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MJW21196G | Active | Pb-free
Halide free | TO-247-3 | 340L-02 | NA | Tube | 30 | $2.0 |
| MJW21196 | Last Shipments | | TO-247-3 | 340L-02 | NA | Tube | 30 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | VCEO(sus) Min (V) | hFE Min | hFE Max | PTM Max (W) | fT Min (MHz) |
|---|
| MJW21196G | NPN | 16 | 250 | 20 | 80 | 200 | 4 |
