NGTB30N135IHR1: IGBT 1350V 30A with Monolithic Free Wheeling Diode.
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, provides superior
performance in demanding switching applications, and offers low
on−state voltage with minimal switching losses. The IGBT is well
suited for resonant or soft switching applications.
特性- Extremely Efficient Trench with Fieldstop Technology
- 1350 V Breakdown Voltage
- Optimized for Low Losses in IH Cooker Application
- Designed for High System Level Robustness
- These are Pb−Free Devices
|
应用- Inductive Heating
- Consumer Appliances
- Soft Switching
| 终端产品 |
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB30N135IHR1WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.8 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB30N135IHR1WG | 1350 | 30 | 2.4 | 1.7 | 0.63 | | | | 220 | | | 394 | No |
