NGTB50N65S1: IGBT FSII, 650V, 50A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
特性- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- These are Pb−Free Devices
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数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB50N65S1WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $1.23 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB50N65S1WG | 650 | 50 | 2.1 | 2.65 | 0.53 | 1.25 | 70 | 11 | 128 | | | 300 | Yes |
