NGTB60N65FL2: IGBT 650V 60A Field Stop 2 IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
特性- Extremely Efficient Trench with Field Stop Technology
- Tjmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5µs Short-Circuit Capability
- These are Pb-Free Devices
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应用- Half bridge inverter
- T-Type inverter
- I-Type inverter
| 终端产品- Uninterrupted Power supplies (Offline UPS and Online UPS)
- Solar Inverters / PV inverters
- Motor Control
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数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT - Field Stop II | NGTB60N65FL2W/D (103kB) | 1 | Oct, 2016 |
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB60N65FL2WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $4.77 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB60N65FL2WG | 650 | 60 | 1.64 | 2.13 | 0.66 | 1.59 | 96 | 6.8 | 318 | 5 | | 595 | Yes |
