105℃工作 SPI BUS EEPROM BR25A512FVT-3M

BR25A512FVT-3M是512Kbit SPI BUS接口的串行EEPROM。

型号Status封装包装数量最小独立包装数量包装形态RoHS
BR25A512FVT-3MGE2供应中TSSOP-B830003000TapingYes

BR25A512FVT-3M 数据手册 Data Sheet

技术特性
GradeAutomotive
I/FSPI BUS
Density [bit]512K
Bit Format [Word x Bit]64K x 8
PackageTSSOP-B8
Operating Temperature (Min.)[°C]-40
Operating Temperature (Max.)[°C]105
Vcc(Min.)[V]2.5
Vcc(Max.)[V]5.5
Circuit Current (Max.)[mA]4.0
Standby Current (Max.)[μA]10.0
Write Cycle (Max.)[ms]5.0
Input Frequency (Max.)[Hz]10M
Endurance (Max.)[Cycle]106
Data Retention (Max.)[Year]100
技术资料下载
产品特点
  • High Speed Clock Action up to 10MHz (Max)
  • Wait Function by HOLDB Terminal
  • Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
  • 2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use
  • Up to 128 Bytes in Page Write Mode
  • For SPI BUS Interface (CPOL, CPHA) = (0, 0), (1, 1)
  • Self-timed Programming Cycle
  • Low Current Consumption
    ·At Write Action (5V) : 0.7mA (Typ)
    ·At Read Action (5V) : 2.4mA (Typ)
    ·At Standby Action (5V) : 0.1µA (Typ)
  • Address Auto Increment Function at Read Action
  • Prevention of Write Mistake
    ·Write Prohibition at Power On
    ·Write Prohibition by Command Code (WRDI)
    ·Write Prohibition by WPB Pin
    ·Write Prohibition Block Setting by Status Registers (BP1, BP0)
    ·Prevention of Write Mistake at Low Voltage
  • More than 100 years Data Retention
  • More than 1 Million Write Cycles
  • Bit Format 64K×8
  • Initial Delivery Data
    Memory Array : FFh
    Status Register: WPEN, BP1, BP0 : 0
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