SiC Power Module BSM080D12P2C008

BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.

型号Status封装包装数量最小独立包装数量包装形态RoHS
BSM080D12P2C008供应中C1212TrayYes

BSM080D12P2C008 数据手册 Data Sheet

技术特性
Drain-source Voltage[V]1200
Drain Current[A]80.0
Total Power Dissipation[W]600
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-40
Storage Temperature (Max.)[°C]125
技术资料下载
产品特点
  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.
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