Nch 600V 4A 功率MOSFET R6004KND

R6004KND是低导通电阻的高速开关速度的功率MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
R6004KNDTL开发中CPT325002500TapingYes

R6004KND 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]600
Drain Current ID[A]4.0
RDS(on)[Ω] VGS=10V (Typ.)0.9
RDS(on)[Ω] VGS=Drive (Typ.)0.9
Total gate charge Qg[nC]10.2
Power Dissipation (PD)[W]58.0
Drive Voltage[V]10.0
Trr (Typ.)[ns]230
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on-resistance.
  • Ultra fast switching speed.
  • Parallel use is easy.
  • Pb-free lead plating; RoHS compliant.
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R6004KND R6004KND
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1