Nch 30V 13A 中功率MOSFET RQ3E130BN

RQ3E130BN是大功率封装(HSMT8)的MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ3E130BNTB供应中HSMT830003000TapingYes

RQ3E130BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]13.0
RDS(on)[Ω] VGS=10V (Typ.)0.0044
RDS(on)[Ω] VGS=Drive (Typ.)0.0067
Total gate charge Qg[nC]16.0
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • 监控摄像机(IP网络)
技术资料下载
产品特点
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating; RoHS compliant.
  • Halogen Free
引脚配置图
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RQ3E130BN RQ3E130BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model RQ3E130BN
Thermal Model (lib) RQ3E130BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60