Nch 30V 39A Middle Power MOSFET RQ3E180BN

RQ3E180BN is low on-resistance and high power package MOSFET for switching application.

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ3E180BNTB供应中HSMT830003000TapingYes

RQ3E180BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]39.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0037
RDS(on)[Ω] VGS=10V (Typ.)0.0028
RDS(on)[Ω] VGS=Drive (Typ.)0.0037
Total gate charge Qg[nC]37.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • 监控摄像机（IP网络）
技术资料下载
产品特点
  • Low on - resistance.
  • High Power Package (HSMT8).
  • Pb-free lead plating ; RoHS compliant.
  • Halogen Free.
引脚配置图
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RQ3E180BN RQ3E180BN
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Spice Model (lib) RQ3E180BN
Thermal Model (lib) RQ3E180BN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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