Nch 40V 10A 功率MOSFET RQ3G100GN

RQ3G100GN是4.5V驱动的Nch功率MOSFET。罗姆通过采用微小工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有可实现小型、高功率、复合化的丰富产品阵容，可满足多样的市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ3G100GNTB供应中HSMT830003000TapingYes

RQ3G100GN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]40
Drain Current ID[A]10.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0141
RDS(on)[Ω] VGS=10V (Typ.)0.011
RDS(on)[Ω] VGS=Drive (Typ.)0.0141
Total gate charge Qg[nC]4.3
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
引脚配置图
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RQ3G100GN RQ3G100GN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model RQ3G100GN
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RQ5E035BN
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