2STR1160:Low voltage fast-switching NPN power transistor

The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

The complementary PNP is the 2STR2160.

Key Features

  • Very low collector-emitter saturation voltage
  • High current gain characteristic
  • Fast switching speed
  • Miniature SOT-23 plastic package for surface mounting circuits
产品规格
DescriptionVersionSize
DS5711: Low voltage fast-switching NPN power transistor3.0373 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STR1160SOT-23Tape And Reel0.074500NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
2STR1160SOT-23IndustrialEcopack2md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.pdf
md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.xml
Low voltage fast-switching NPN power transistor 2STR1160
md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.pdf 2STR1160
md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.xml 2STR1160