2SK2606 Power MOSFET (N-ch 700V《VDSS)

数据手册DataSheet
产品概述
PolarityN-ch
Generationπ-MOSⅢ
RoHS Compatible Product(s) (#)Available
封装信息
Toshiba Package NameTO-3P(N)IS
Pins3
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Drain currentID8A
Power DissipationPD85W
Drain-Source voltageVDSS800V
Drain-Source voltageVDSS800V
产品特性
项目符号条件数值单位
Total gate charge (Typ.)Qg-68nC
Drain-Source on-resistance (Max)RDS(ON)|VGS|=10V1.2Ω
技术资料
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogMOSFETs[Mar,2016](PDF: 2526KB)
CatalogPart Number List: MOSFETs[Mar,2016](PDF: 1295KB)