MT3S15TU Radio-frequency bipolar transistor

数据手册DataSheet
产品概述
Application ScopeVHF/UHF band low noise amplifier
PolarityNPN
Number of Circuits1
RoHS Compatible Product(s) (#)Available
Assembly bases日本
封装信息
Package Image
Toshiba Package NameUFM
Pins3
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC0.08A
Collector power dissipationPC900mW
Collector power dissipationPCmounted900mW
Junction temperatureTj150degC
Collector-emitter voltageVCEO6V
产品特性
项目符号条件数值单位
Insertion Gain (Typ.)|S21|2f=1GHz13.5dB
Transition frequency (Typ.)fT-11.5GHz
Noise Figure (Typ.)NFf=1GHz1.6dB
技术资料
CatalogRadio-Frequency Semiconductors[Feb,2015](PDF: 1320KB)
CatalogRadio-Frequency Semiconductors Diodes[Sep,2006](PDF: 2219KB)
CatalogRadio-Frequency Semiconductors Transistors, FETs, Cell Packs[Jan,2006](PDF: 2873KB)
CatalogHigh-Frequency Semiconductors Power Devices[Mar,2004](PDF: 2496KB)
2SC6135