数据手册DataSheet产品概述| Polarity | N-ch |
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| Generation | U-MOSⅦ-H |
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| RoHS Compatible Product(s) (#) | Available |
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| Assembly bases | 泰国 |
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封装信息| Toshiba Package Name | CST3C |
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| Pins | 3 |
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| Absolute Maximum Ratings| Characteristics | Symbol | Rating | Unit |
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| Drain current | ID | 0.15 | A | | Drain-Source voltage | VDSS | 60 | V | | Gate-Source voltage | VGSS | ±20 | V |
产品特性| 项目 | 符号 | 条件 | 数值 | 单位 |
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| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=4.5V | 4.7 | Ω | | Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 3.9 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=4.5V | 3.2 | Ω | | Drain-Source on-resistance (Typ.) | RDS(ON) | |VGS|=10V | 2.8 | Ω | | Gate threshold voltage (Max) | Vth | - | 2.1 | V | | Gate threshold voltage (Min) | Vth | - | 1.1 | V |
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