TC58NYG2S0HBAI4 SLC NAND

数据手册DataSheet
产品概述
Capacity (bit)4G
Tech. node (nm)24
Page size (bit)(4096+256)×8
Block size (bit)(256K+16K)×8
I/O (bit)8
Keyword4Gbit SLC NAND, 1.8V, x8, 24nm, FBGA
RoHS Compatible Product(s) (#)Available
封装信息
Toshiba Package NameFBGA
Pins63
Package size9mm x 11mm
Pin pitch0.8
产品特性
项目符号条件数值单位
Access Time (1st access) (Max)--25μs
Access Time (Serial Cycle) (Min)--25nsec
Operational TemperatureTopr--40 to 85degC
Supply VoltageVCC-1.7 to 1.95V
Block Erasing Time (Typ.)tBERASE-3.5msec
Program Time (Typ.)tPROG-0.3msec
技术资料
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
CatalogFlash Memory[Mar,2016](PDF: 2484KB)
CatalogTOSHIBA SLC NAND Flash Memory[Jul,2011](PDF: 1628KB)