TPC6602 Power transistor for high-speed switching applications

数据手册DataSheet
产品概述
PolarityPNP
RoHS Compatible Product(s) (#)Available
Assembly bases马来西亚
封装信息
Package Image
Toshiba Package NameVS-6
Pins6
MountingSurface Mount
Absolute Maximum Ratings
CharacteristicsSymbolRatingUnit
Collector CurrentIC-3.5A
Collector CurrentIC-2A
Collector CurrentICP-3.5A
Collector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm))PC1.6W
Collector-emitter voltageVCEO-10V
产品特性
项目符号条件数值单位
DC Current Gain hFE (Max)hFEIC=-0.2A
VCE=-2V
500-
DC Current Gain hFE (Min)hFEIC=-0.2A
VCE=-2V
200-
Collector Emitter Saturation Voltage (Max)VCE(sat)IB=-20mA
IC=-0.6A
-0.19V
订购型号
exampleMOQ(pcs)ReliabilityInformationRoHS
Orderable part numberAssembly bases
TPC6602(TE85L,F,M)Malaysia3000yes
技术资料
Environment InformationCertificate Regarding EU RoHS(2011/65/EU)Controlled Substances[Apr,2016](PDF: 52KB)
Environment InformationCertificate on Content of SVHC of REACH[Apr,2016](PDF: 43KB)
相关技术数据Construction and Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 108KB)
相关技术数据Maximum Ratings: Power MOSFET Application Notes[Oct,2004](PDF: 191KB)
相关技术数据Electrical Characteristics: Power MOSFET Application Notes[Oct,2004](PDF: 182KB)
相关技术数据Application Precautions: Power MOSFET Application Notes[Oct,2004](PDF: 303KB)
相关技术数据Heat Sink Design: Power MOSFET Application Notes[Oct,2004](PDF: 237KB)
CatalogBipolar Power Transistors[Jun,2015](PDF: 1139KB)
TPC6902